Emission enhancement from nonpolar a-plane III-nitride nanopillar

Byung Jae Kim; Younghun Jung; Michael A. Mastro; Jennifer Hite; Neeraj Nepal; Charles R. Eddy; Jihyun Kim

doi:10.1116/1.3545696

Emission enhancement from nonpolar a-plane III-nitride nanopillar

Byung Jae Kim, Younghun Jung, Michael A. Mastro, Jennifer Hite, Neeraj Nepal, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A nonpolar a -plane GaN-based light emitting structure was patterned by self-assembled SiO₂ nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The photoluminescence (PL) intensity was enhanced by ∼110% after the anisotropic ICP etch, compared with an unprocessed sample, which is attributed to a reduction in wave-guiding effects in the thin film. Additionally, the anisotropic ICP etch caused minimal wavelength shift in the dominant 3.34 eV near-bandedge radiative transition. A subsequent photoelectrochemical (PEC) etch process of the a -plane GaN nanopillars preferentially etched the underlying n -type layers, leaving a wider p -type cap. The n -type layers wet-etched by recession of the N-polar (000-1) plane (perpendicular to the a -plane growth axis) via formation of the distinctive pyramid-shaped facets. The PL intensity was enhanced by ∼168% after ICP and PEC etching although the peak emission occurred at a lower energy. The combination of nanosphere lithography and ICP was highly effective in improving the light extraction efficiency in a -plane nonpolar GaN-based light emitting diodes.

Original language	English
Article number	021004
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	29
Issue number	2
DOIs	https://doi.org/10.1116/1.3545696
Publication status	Published - 2011

Bibliographical note

Funding Information:
This research was supported by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2010-0029328). The research at the U.S. Naval Research Laboratory was supported by the Office of the Naval Research.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Emission enhancement from nonpolar a-plane III-nitride nanopillar",

abstract = "A nonpolar a -plane GaN-based light emitting structure was patterned by self-assembled SiO2 nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The photoluminescence (PL) intensity was enhanced by ∼110% after the anisotropic ICP etch, compared with an unprocessed sample, which is attributed to a reduction in wave-guiding effects in the thin film. Additionally, the anisotropic ICP etch caused minimal wavelength shift in the dominant 3.34 eV near-bandedge radiative transition. A subsequent photoelectrochemical (PEC) etch process of the a -plane GaN nanopillars preferentially etched the underlying n -type layers, leaving a wider p -type cap. The n -type layers wet-etched by recession of the N-polar (000-1) plane (perpendicular to the a -plane growth axis) via formation of the distinctive pyramid-shaped facets. The PL intensity was enhanced by ∼168% after ICP and PEC etching although the peak emission occurred at a lower energy. The combination of nanosphere lithography and ICP was highly effective in improving the light extraction efficiency in a -plane nonpolar GaN-based light emitting diodes.",

author = "Kim, {Byung Jae} and Younghun Jung and Mastro, {Michael A.} and Jennifer Hite and Neeraj Nepal and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: This research was supported by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2010-0029328). The research at the U.S. Naval Research Laboratory was supported by the Office of the Naval Research.",

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AU - Kim, Byung Jae

AU - Jung, Younghun

AU - Mastro, Michael A.

AU - Hite, Jennifer

AU - Nepal, Neeraj

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: This research was supported by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2010-0029328). The research at the U.S. Naval Research Laboratory was supported by the Office of the Naval Research.

PY - 2011

Y1 - 2011

N2 - A nonpolar a -plane GaN-based light emitting structure was patterned by self-assembled SiO2 nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The photoluminescence (PL) intensity was enhanced by ∼110% after the anisotropic ICP etch, compared with an unprocessed sample, which is attributed to a reduction in wave-guiding effects in the thin film. Additionally, the anisotropic ICP etch caused minimal wavelength shift in the dominant 3.34 eV near-bandedge radiative transition. A subsequent photoelectrochemical (PEC) etch process of the a -plane GaN nanopillars preferentially etched the underlying n -type layers, leaving a wider p -type cap. The n -type layers wet-etched by recession of the N-polar (000-1) plane (perpendicular to the a -plane growth axis) via formation of the distinctive pyramid-shaped facets. The PL intensity was enhanced by ∼168% after ICP and PEC etching although the peak emission occurred at a lower energy. The combination of nanosphere lithography and ICP was highly effective in improving the light extraction efficiency in a -plane nonpolar GaN-based light emitting diodes.

AB - A nonpolar a -plane GaN-based light emitting structure was patterned by self-assembled SiO2 nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The photoluminescence (PL) intensity was enhanced by ∼110% after the anisotropic ICP etch, compared with an unprocessed sample, which is attributed to a reduction in wave-guiding effects in the thin film. Additionally, the anisotropic ICP etch caused minimal wavelength shift in the dominant 3.34 eV near-bandedge radiative transition. A subsequent photoelectrochemical (PEC) etch process of the a -plane GaN nanopillars preferentially etched the underlying n -type layers, leaving a wider p -type cap. The n -type layers wet-etched by recession of the N-polar (000-1) plane (perpendicular to the a -plane growth axis) via formation of the distinctive pyramid-shaped facets. The PL intensity was enhanced by ∼168% after ICP and PEC etching although the peak emission occurred at a lower energy. The combination of nanosphere lithography and ICP was highly effective in improving the light extraction efficiency in a -plane nonpolar GaN-based light emitting diodes.

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Emission enhancement from nonpolar a-plane III-nitride nanopillar

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