Abstract
A memory controller refreshes DRAM rows periodically in order to prevent DRAM cells from losing data over time. Refreshes consume a large amount of energy, and the problem becomes worse with the future larger DRAM capacity. Previously proposed selective refreshing techniques are either conservative in exploiting the opportunity or expensive in terms of required implementation overhead. In this paper, we propose a novel DRAM selective refresh technique by using page residence in a memory hierarchy of hardware-managed TLB. Our technique maximizes the opportunity to optimize refreshing by activating/deactivating refreshes for DRAM pages when their PTEs are inserted to/evicted from TLB or data caches, while the implementation cost is minimized by slightly extending the existing infrastructure. Our experiment shows that the proposed technique can reduce DRAM refresh power 43.6% on average and EDP 3.5% with small amount of hardware overhead.
Original language | English |
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Pages (from-to) | 170-182 |
Number of pages | 13 |
Journal | IEICE Transactions on Electronics |
Volume | E101C |
Issue number | 3 |
DOIs | |
Publication status | Published - 2018 Mar |
Bibliographical note
Funding Information:This work was supported by the IT R&D program of MOTIE/KEIT. [ 10052653, Development of processing in memory architecture and parallel processing for data bounding applications ]
Publisher Copyright:
© 2018 The Institute of Electronics, Information and Communication Engineers.
Keywords
- DRAM
- EDP
- Power Reduction
- Selective Refresh
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering