Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits

Soong Ju Oh; Zhuqing Wang; Nathaniel E. Berry; Ji Hyuk Choi; Tianshuo Zhao; E. Ashley Gaulding; Taejong Paik; Yuming Lai; Christopher B. Murray; Cherie R. Kagan

doi:10.1021/nl502491d

Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits

Soong Ju Oh, Zhuqing Wang, Nathaniel E. Berry, Ji Hyuk Choi, Tianshuo Zhao, E. Ashley Gaulding, Taejong Paik, Yuming Lai, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.

Original language	English
Pages (from-to)	6210-6216
Number of pages	7
Journal	Nano Letters
Volume	14
Issue number	11
DOIs	https://doi.org/10.1021/nl502491d
Publication status	Published - 2014 Nov 12
Externally published	Yes

Keywords

PbSe
bandlike transport
charge injection
charge transport
circuit
field-effect transistor

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl502491d

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title = "Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits",

abstract = "We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.",

keywords = "PbSe, bandlike transport, charge injection, charge transport, circuit, field-effect transistor",

author = "Oh, {Soong Ju} and Zhuqing Wang and Berry, {Nathaniel E.} and Choi, {Ji Hyuk} and Tianshuo Zhao and Gaulding, {E. Ashley} and Taejong Paik and Yuming Lai and Murray, {Christopher B.} and Kagan, {Cherie R.}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

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month = nov,

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doi = "10.1021/nl502491d",

language = "English",

volume = "14",

pages = "6210--6216",

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TY - JOUR

T1 - Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits

AU - Oh, Soong Ju

AU - Wang, Zhuqing

AU - Berry, Nathaniel E.

AU - Choi, Ji Hyuk

AU - Zhao, Tianshuo

AU - Gaulding, E. Ashley

AU - Paik, Taejong

AU - Lai, Yuming

AU - Murray, Christopher B.

AU - Kagan, Cherie R.

PY - 2014/11/12

Y1 - 2014/11/12

N2 - We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.

AB - We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.

KW - PbSe

KW - bandlike transport

KW - charge injection

KW - charge transport

KW - circuit

KW - field-effect transistor

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U2 - 10.1021/nl502491d

DO - 10.1021/nl502491d

M3 - Article

AN - SCOPUS:84910108789

SN - 1530-6984

VL - 14

SP - 6210

EP - 6216

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits

Abstract

Keywords

ASJC Scopus subject areas

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