Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Vishnukanthan Venkatachalapathy; Augustinas Galeckas; In Hwan Lee; Andrej Yu Kuznetsov

doi:10.1016/j.physb.2011.09.065

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Vishnukanthan Venkatachalapathy, Augustinas Galeckas, In Hwan Lee, Andrej Yu Kuznetsov

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Original language	English
Pages (from-to)	1476-1480
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	407
Issue number	10
DOIs	https://doi.org/10.1016/j.physb.2011.09.065
Publication status	Published - 2012 May 15
Externally published	Yes

Bibliographical note

Funding Information:
Financial support from the Research Council of Norway via a FRINAT project “Understanding ZnO” is gratefully acknowledged.

Keywords

AlN buffer
Metal organic vapor phase epitaxy
Photoluminescence
Strain relaxation
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2011.09.065

Cite this

@article{ec82667091704fe5ab9ae48997c0c4ae,

title = "Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness",

abstract = "ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.",

keywords = "AlN buffer, Metal organic vapor phase epitaxy, Photoluminescence, Strain relaxation, ZnO",

author = "Vishnukanthan Venkatachalapathy and Augustinas Galeckas and Lee, {In Hwan} and Kuznetsov, {Andrej Yu}",

note = "Funding Information: Financial support from the Research Council of Norway via a FRINAT project “Understanding ZnO” is gratefully acknowledged.",

year = "2012",

month = may,

day = "15",

doi = "10.1016/j.physb.2011.09.065",

language = "English",

volume = "407",

pages = "1476--1480",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "10",

}

TY - JOUR

T1 - Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

AU - Venkatachalapathy, Vishnukanthan

AU - Galeckas, Augustinas

AU - Lee, In Hwan

AU - Kuznetsov, Andrej Yu

N1 - Funding Information: Financial support from the Research Council of Norway via a FRINAT project “Understanding ZnO” is gratefully acknowledged.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

AB - ZnO properties were investigated as a function of AlN buffer layer thickness (0100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

KW - AlN buffer

KW - Metal organic vapor phase epitaxy

KW - Photoluminescence

KW - Strain relaxation

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84859160361&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2011.09.065

DO - 10.1016/j.physb.2011.09.065

M3 - Article

AN - SCOPUS:84859160361

SN - 0921-4526

VL - 407

SP - 1476

EP - 1480

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 10

ER -

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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