Enhanced DC-Operated Electroluminescence of Forwardly Aligned p/MQW/n InGaN Nanorod LEDs via DC Offset-AC Dielectrophoresis

Yun Jae Eo, Gang Yeol Yoo, Hyelim Kang, Young Ki Lee, Chan Sik Kim, Ji Hye Oh, Keyong Nam Lee, Woong Kim, Young Rag Do

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    35 Citations (Scopus)

    Abstract

    We introduce an orientation-controlled alignment process of p-GaN/InGaN multiquantum-well/n-GaN (p/MQW/n InGaN) nanorod light-emitting diodes (LEDs) by applying the direct current (DC) offset-alternating current (AC) or pulsed DC electric fields across interdigitated metal electrodes. The as-forwardly aligned p/MQW/n InGaN nanorod LEDs by a pulsed DC dielectrophoresis (DEP) assembly process improve the electroluminescence (EL) intensities by 1.8 times compared to the conventional AC DEP assembly process under DC electric field operation and exhibit an enhanced applied current and EL brightness in the current-voltage and EL intensity-voltage curves, which can be directly used as the fundamental data to construct DC-operated nanorod LED devices, such as LED areal surface lightings, scalable lightings (micrometers to inches) and formable surface lightings. The enhancement in the applied current, the improved EL intensity, and the increased number of forwardly aligned p/MQW/n InGaN nanorods in panchromatic cathodoluminescence images confirm the considerable enhancement of forwardly aligned one-dimensional nanorod LEDs between two opposite electrodes using DC offset-AC or a pulsed DC electric field DEP assembly process. These DC offset-AC or pulsed DC electric field DEP assembly processes suggest that designing for these types of interactions could yield new ways to control the orientation of asymmetric p/MQW/n InGaN diode-type LED nanorods with a relatively low aspect ratio.

    Original languageEnglish
    Pages (from-to)37912-37920
    Number of pages9
    JournalACS Applied Materials and Interfaces
    Volume9
    Issue number43
    DOIs
    Publication statusPublished - 2017 Nov 1

    Bibliographical note

    Funding Information:
    This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science, ICT & Future Planning (MSIP) (No. 2016R1A5A1012966), and by the Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20163010012570).

    Publisher Copyright:
    © 2017 American Chemical Society.

    Keywords

    • DC offset-AC electric field
    • GaN nanorod
    • dielectrophoresis
    • light-emitting diode

    ASJC Scopus subject areas

    • General Materials Science

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