Enhanced electrical and photosensing properties of pentacene organic thin-film phototransistors by modifying the gate dielectric thickness

Jae Hong Kwon; Myung Ho Chung; Tae Yeon Oh; Byeong Kwon Ju; F. Yakuphanoglu

doi:10.1016/j.mee.2010.03.008

Enhanced electrical and photosensing properties of pentacene organic thin-film phototransistors by modifying the gate dielectric thickness

Jae Hong Kwon, Myung Ho Chung, Tae Yeon Oh, Byeong Kwon Ju, F. Yakuphanoglu

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The effects of dielectric layer thickness on the electrical performance and photosensing properties of organic pentacene thin-film transistors have been investigated. To improve the electrical performance of pentacene thin-film transistors (TFTs), the poly-4-vinylphenol (PVP) polymer with various thicknesses was used in fabrication of the pentacene transistors. The pentacene thin-film transistor with the PVP dielectric layer of 70 nm exhibited a field-effect mobility of 4.46 cm²/Vs in the saturation region, a threshold voltage of -4.0 V, a gate voltage swing of 2.1 V/decade and an on/off current ratio of 5.1 × 10⁴. In the OFF-state, the photoresponse of the transistors increases linearly with illumination intensity. The pentacene transistor with the thinner dielectric layer thickness indicates the best photosensing behavior. It is evaluated that the electrical performance and photosensing properties of pentacene thin-film transistors can be improved by using various thickness dielectric layer.

Original language	English
Pages (from-to)	2306-2311
Number of pages	6
Journal	Microelectronic Engineering
Volume	87
Issue number	11
DOIs	https://doi.org/10.1016/j.mee.2010.03.008
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (No. 2009-0083126 ), the IT R&D program of Ministry of Knowledge Economy of Korea/Institute for Information Technology Advancement (MKE/IITA, 009-F-018-01, TFT backplane technology for next generation display), and the Industrial–Educational Cooperation Program between Korea University and LG Display.

Keywords

Pentacene
Photosensing
Thin-film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2010.03.008

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title = "Enhanced electrical and photosensing properties of pentacene organic thin-film phototransistors by modifying the gate dielectric thickness",

abstract = "The effects of dielectric layer thickness on the electrical performance and photosensing properties of organic pentacene thin-film transistors have been investigated. To improve the electrical performance of pentacene thin-film transistors (TFTs), the poly-4-vinylphenol (PVP) polymer with various thicknesses was used in fabrication of the pentacene transistors. The pentacene thin-film transistor with the PVP dielectric layer of 70 nm exhibited a field-effect mobility of 4.46 cm2/Vs in the saturation region, a threshold voltage of -4.0 V, a gate voltage swing of 2.1 V/decade and an on/off current ratio of 5.1 × 104. In the OFF-state, the photoresponse of the transistors increases linearly with illumination intensity. The pentacene transistor with the thinner dielectric layer thickness indicates the best photosensing behavior. It is evaluated that the electrical performance and photosensing properties of pentacene thin-film transistors can be improved by using various thickness dielectric layer.",

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note = "Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (No. 2009-0083126 ), the IT R&D program of Ministry of Knowledge Economy of Korea/Institute for Information Technology Advancement (MKE/IITA, 009-F-018-01, TFT backplane technology for next generation display), and the Industrial–Educational Cooperation Program between Korea University and LG Display.",

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AU - Ju, Byeong Kwon

AU - Yakuphanoglu, F.

N1 - Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (No. 2009-0083126 ), the IT R&D program of Ministry of Knowledge Economy of Korea/Institute for Information Technology Advancement (MKE/IITA, 009-F-018-01, TFT backplane technology for next generation display), and the Industrial–Educational Cooperation Program between Korea University and LG Display.

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N2 - The effects of dielectric layer thickness on the electrical performance and photosensing properties of organic pentacene thin-film transistors have been investigated. To improve the electrical performance of pentacene thin-film transistors (TFTs), the poly-4-vinylphenol (PVP) polymer with various thicknesses was used in fabrication of the pentacene transistors. The pentacene thin-film transistor with the PVP dielectric layer of 70 nm exhibited a field-effect mobility of 4.46 cm2/Vs in the saturation region, a threshold voltage of -4.0 V, a gate voltage swing of 2.1 V/decade and an on/off current ratio of 5.1 × 104. In the OFF-state, the photoresponse of the transistors increases linearly with illumination intensity. The pentacene transistor with the thinner dielectric layer thickness indicates the best photosensing behavior. It is evaluated that the electrical performance and photosensing properties of pentacene thin-film transistors can be improved by using various thickness dielectric layer.

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Enhanced electrical and photosensing properties of pentacene organic thin-film phototransistors by modifying the gate dielectric thickness

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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