Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

Guohai Chen; Dong Hoon Shin; Takayuki Iwasaki; Hiroshi Kawarada; Cheol Jin Lee

doi:10.1088/0957-4484/19/41/415703

Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

Guohai Chen, Dong Hoon Shin, Takayuki Iwasaki, Hiroshi Kawarada, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO₂/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO ₂/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm^-1 at the emission current density of 0.1 μA cm^-2 and a threshold field of 1.67 V μm^-1 at the emission current density of 1.0 mA cm^-2. The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.

Original language	English
Article number	415703
Journal	Nanotechnology
Volume	19
Issue number	41
DOIs	https://doi.org/10.1088/0957-4484/19/41/415703
Publication status	Published - 2008 Oct 15

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays",

abstract = "Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm-1 at the emission current density of 0.1 μA cm-2 and a threshold field of 1.67 V μm-1 at the emission current density of 1.0 mA cm-2. The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.",

author = "Guohai Chen and Shin, {Dong Hoon} and Takayuki Iwasaki and Hiroshi Kawarada and Lee, {Cheol Jin}",

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doi = "10.1088/0957-4484/19/41/415703",

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AU - Chen, Guohai

AU - Shin, Dong Hoon

AU - Iwasaki, Takayuki

AU - Kawarada, Hiroshi

AU - Lee, Cheol Jin

PY - 2008/10/15

Y1 - 2008/10/15

N2 - Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm-1 at the emission current density of 0.1 μA cm-2 and a threshold field of 1.67 V μm-1 at the emission current density of 1.0 mA cm-2. The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.

AB - Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm-1 at the emission current density of 0.1 μA cm-2 and a threshold field of 1.67 V μm-1 at the emission current density of 1.0 mA cm-2. The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.

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Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

Abstract

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