Enhanced hole mobility-lifetime product in selenium-added CdTe compounds

Kihyun Kim; Younghak Kim; Jan Franc; Petro Fochuk; Aleksey E. Bolotnikov; Ralph B. James

doi:10.1016/j.nima.2023.168363

Enhanced hole mobility-lifetime product in selenium-added CdTe compounds

Kihyun Kim^*
, Younghak Kim
, Jan Franc
, Petro Fochuk
, Aleksey E. Bolotnikov
, Ralph B. James

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

An improved detector performance for 2% selenium-added CdZnTe(CZT) was observed and explained by the reduced concentration of a deep-level hole trap, which was confirmed by photoluminescence measurements of CdZnTeSe(CZTS) and CdTeSe(CTS). The hole lifetime in CZTS was found to be 2.18μs in the selenium-containing material, which is much longer than that typically measured by 10–100 times. The prolonged lifetime of hole carriers is likely caused by the disappearance of hole trapping at a specific binding energy of 1.1-eV below the conduction band. Also, the enhanced pulse height spectra of CZTS gamma-ray detectors were explained in terms of the ratio of electron and hole mobility-lifetime products. Cu-migrated patterns are used for the first time to reveal sub-grains and their networks in CZT and CZTS. Based on qualitative analysis, the Cu-migrated patterns in CZT and CZTS showed similar results.

Original language	English
Article number	168363
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	1053
DOIs	https://doi.org/10.1016/j.nima.2023.168363
Publication status	Published - 2023 Aug

Bibliographical note

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

1.1-eV trap
Carrier drift time measurement
CdZnTe
CdZnTeSe
Cu-migrated patterns
EPD
Hole lifetime
Selenium doping

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nima.2023.168363

Cite this

@article{3d94a8e9ab1345659383b92f160a67f7,

title = "Enhanced hole mobility-lifetime product in selenium-added CdTe compounds",

abstract = "An improved detector performance for 2\% selenium-added CdZnTe(CZT) was observed and explained by the reduced concentration of a deep-level hole trap, which was confirmed by photoluminescence measurements of CdZnTeSe(CZTS) and CdTeSe(CTS). The hole lifetime in CZTS was found to be 2.18μs in the selenium-containing material, which is much longer than that typically measured by 10–100 times. The prolonged lifetime of hole carriers is likely caused by the disappearance of hole trapping at a specific binding energy of 1.1-eV below the conduction band. Also, the enhanced pulse height spectra of CZTS gamma-ray detectors were explained in terms of the ratio of electron and hole mobility-lifetime products. Cu-migrated patterns are used for the first time to reveal sub-grains and their networks in CZT and CZTS. Based on qualitative analysis, the Cu-migrated patterns in CZT and CZTS showed similar results.",

keywords = "1.1-eV trap, Carrier drift time measurement, CdZnTe, CdZnTeSe, Cu-migrated patterns, EPD, Hole lifetime, Selenium doping",

author = "Kihyun Kim and Younghak Kim and Jan Franc and Petro Fochuk and Bolotnikov, \{Aleksey E.\} and James, \{Ralph B.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = aug,

doi = "10.1016/j.nima.2023.168363",

language = "English",

volume = "1053",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Enhanced hole mobility-lifetime product in selenium-added CdTe compounds

AU - Kim, Kihyun

AU - Kim, Younghak

AU - Franc, Jan

AU - Fochuk, Petro

AU - Bolotnikov, Aleksey E.

AU - James, Ralph B.

PY - 2023/8

Y1 - 2023/8

N2 - An improved detector performance for 2% selenium-added CdZnTe(CZT) was observed and explained by the reduced concentration of a deep-level hole trap, which was confirmed by photoluminescence measurements of CdZnTeSe(CZTS) and CdTeSe(CTS). The hole lifetime in CZTS was found to be 2.18μs in the selenium-containing material, which is much longer than that typically measured by 10–100 times. The prolonged lifetime of hole carriers is likely caused by the disappearance of hole trapping at a specific binding energy of 1.1-eV below the conduction band. Also, the enhanced pulse height spectra of CZTS gamma-ray detectors were explained in terms of the ratio of electron and hole mobility-lifetime products. Cu-migrated patterns are used for the first time to reveal sub-grains and their networks in CZT and CZTS. Based on qualitative analysis, the Cu-migrated patterns in CZT and CZTS showed similar results.

AB - An improved detector performance for 2% selenium-added CdZnTe(CZT) was observed and explained by the reduced concentration of a deep-level hole trap, which was confirmed by photoluminescence measurements of CdZnTeSe(CZTS) and CdTeSe(CTS). The hole lifetime in CZTS was found to be 2.18μs in the selenium-containing material, which is much longer than that typically measured by 10–100 times. The prolonged lifetime of hole carriers is likely caused by the disappearance of hole trapping at a specific binding energy of 1.1-eV below the conduction band. Also, the enhanced pulse height spectra of CZTS gamma-ray detectors were explained in terms of the ratio of electron and hole mobility-lifetime products. Cu-migrated patterns are used for the first time to reveal sub-grains and their networks in CZT and CZTS. Based on qualitative analysis, the Cu-migrated patterns in CZT and CZTS showed similar results.

KW - 1.1-eV trap

KW - Carrier drift time measurement

KW - CdZnTe

KW - CdZnTeSe

KW - Cu-migrated patterns

KW - EPD

KW - Hole lifetime

KW - Selenium doping

UR - https://www.scopus.com/pages/publications/85160356170

U2 - 10.1016/j.nima.2023.168363

DO - 10.1016/j.nima.2023.168363

M3 - Article

AN - SCOPUS:85160356170

SN - 0168-9002

VL - 1053

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

M1 - 168363

ER -

Enhanced hole mobility-lifetime product in selenium-added CdTe compounds

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this