Abstract
The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.
Original language | English |
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Article number | 161110 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)