Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

Hyunsoo Kim; Jaehee Cho; Jeong Wook Lee; Sukho Yoon; Hyungkun Kim; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.2724903

Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

Hyunsoo Kim, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

Original language	English
Article number	161110
Journal	Applied Physics Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1063/1.2724903
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers",

abstract = "The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.",

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AU - Kim, Hyunsoo

AU - Cho, Jaehee

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AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

N2 - The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

AB - The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

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Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

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