Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

Hyunsoo Kim; Jaehee Cho; Jeong Wook Lee; Sukho Yoon; Hyungkun Kim; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.2724903

Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

Hyunsoo Kim^*
, Jaehee Cho
, Jeong Wook Lee
, Sukho Yoon
, Hyungkun Kim^*
, Cheolsoo Sone
, Yongjo Park
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

Original language	English
Article number	161110
Journal	Applied Physics Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1063/1.2724903
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2724903

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@article{835309d9d09d497ba90d224f628bcdd2,

title = "Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers",

abstract = "The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54\%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.",

author = "Hyunsoo Kim and Jaehee Cho and Lee, \{Jeong Wook\} and Sukho Yoon and Hyungkun Kim and Cheolsoo Sone and Yongjo Park and Seong, \{Tae Yeon\}",

year = "2007",

doi = "10.1063/1.2724903",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

AU - Kim, Hyunsoo

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

N2 - The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

AB - The authors report on the enhancement of the light extraction efficiency of GaN-based light-emitting diodes (LEDs) via the texturing of n-type layers. Compared with standard LEDs, LED fabricated with the textured n-type layers produced a significant improvement in the output power, depending on the reflectivity of the n electrode, the etch-pit size, and the chip dimension. The textured LEDs were found to yield the output power enhancement as high as 54%. However, it was also found that the electrical property of the textured LEDs can be degraded when the size of the etch pits is too large, indicating that a well-controlled texturing process is required for the realization of high-efficiency LEDs.

UR - https://www.scopus.com/pages/publications/34247335480

U2 - 10.1063/1.2724903

DO - 10.1063/1.2724903

M3 - Article

AN - SCOPUS:34247335480

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161110

ER -

Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers

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