Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Hyun Gi Hong; Seok Soon Kim; Dong Yu Kim; Takhee Lee; June O. Song; J. H. Cho; C. Sone; Y. Park; Tae Yeon Seong

doi:10.1088/0268-1242/21/5/004

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Hyun Gi Hong, Seok Soon Kim, Dong Yu Kim, Takhee Lee, June O. Song, J. H. Cho, C. Sone, Y. Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO₂ nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.

Original language	English
Pages (from-to)	594-597
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	21
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/21/5/004
Publication status	Published - 2006 May 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/21/5/004

Cite this

@article{f13b60f82d384ed9aba32fe7975e10c0,

title = "Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes",

abstract = "We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.",

author = "Hong, {Hyun Gi} and Kim, {Seok Soon} and Kim, {Dong Yu} and Takhee Lee and Song, {June O.} and Cho, {J. H.} and C. Sone and Y. Park and Seong, {Tae Yeon}",

year = "2006",

month = may,

day = "1",

doi = "10.1088/0268-1242/21/5/004",

language = "English",

volume = "21",

pages = "594--597",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

AU - Hong, Hyun Gi

AU - Kim, Seok Soon

AU - Kim, Dong Yu

AU - Lee, Takhee

AU - Song, June O.

AU - Cho, J. H.

AU - Sone, C.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.

AB - We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.

UR - http://www.scopus.com/inward/record.url?scp=33645657297&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/5/004

DO - 10.1088/0268-1242/21/5/004

M3 - Article

AN - SCOPUS:33645657297

SN - 0268-1242

VL - 21

SP - 594

EP - 597

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

ER -

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this