Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Lee Woon Jang; Jin Woo Ju; Dae Woo Jeon; Jae Woo Park; A. Y. Polyakov; Seung Jae Lee; Jong Hyeob Baek; Song Mei Lee; Yong Hoon Cho; In Hwan Lee

doi:10.1364/OE.20.006036

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Lee Woon Jang, Jin Woo Ju, Dae Woo Jeon, Jae Woo Park, A. Y. Polyakov, Seung Jae Lee, Jong Hyeob Baek, Song Mei Lee, Yong Hoon Cho, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

Original language	English
Pages (from-to)	6036-6041
Number of pages	6
Journal	Optics Express
Volume	20
Issue number	6
DOIs	https://doi.org/10.1364/OE.20.006036
Publication status	Published - 2012 Mar 12
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OE.20.006036

Cite this

@article{9d3d817a06c04dc18d7867b61baa7938,

title = "Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer",

abstract = "2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.",

author = "Jang, {Lee Woon} and Ju, {Jin Woo} and Jeon, {Dae Woo} and Park, {Jae Woo} and Polyakov, {A. Y.} and Lee, {Seung Jae} and Baek, {Jong Hyeob} and Lee, {Song Mei} and Cho, {Yong Hoon} and Lee, {In Hwan}",

year = "2012",

month = mar,

day = "12",

doi = "10.1364/OE.20.006036",

language = "English",

volume = "20",

pages = "6036--6041",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "6",

}

TY - JOUR

T1 - Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

AU - Jang, Lee Woon

AU - Ju, Jin Woo

AU - Jeon, Dae Woo

AU - Park, Jae Woo

AU - Polyakov, A. Y.

AU - Lee, Seung Jae

AU - Baek, Jong Hyeob

AU - Lee, Song Mei

AU - Cho, Yong Hoon

AU - Lee, In Hwan

PY - 2012/3/12

Y1 - 2012/3/12

N2 - 2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

AB - 2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

UR - http://www.scopus.com/inward/record.url?scp=84858975749&partnerID=8YFLogxK

U2 - 10.1364/OE.20.006036

DO - 10.1364/OE.20.006036

M3 - Article

C2 - 22418481

AN - SCOPUS:84858975749

SN - 1094-4087

VL - 20

SP - 6036

EP - 6041

JO - Optics Express

JF - Optics Express

IS - 6

ER -

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this