Abstract
The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively.
Original language | English |
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Article number | 041401 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 33 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2015 Jul 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry