Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing

Kihyun Keem; Jeongmin Kang; Changjoon Yoon; Dong Young Jeong; Byung Moo Moon; Sangsig Kim

doi:10.1143/JJAP.46.6230

Enhanced performance of ZnO nanowire field effect transistors by H ₂ annealing

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Dong Young Jeong, Byung Moo Moon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H₂ annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H₂/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm²V^-1 s^-1, and the I_max/I_min ratio from 1.5 to 10⁵.

Original language	English
Pages (from-to)	6230-6232
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	9 B
DOIs	https://doi.org/10.1143/JJAP.46.6230
Publication status	Published - 2007 Sept 20

Keywords

Annealing
Field effect transistors
Hydrogen
Nanowire

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.6230

Cite this

@article{861ce16b3d754ef3a9cc2fc98bb6b694,

title = "Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing",

abstract = "The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.",

keywords = "Annealing, Field effect transistors, Hydrogen, Nanowire",

author = "Kihyun Keem and Jeongmin Kang and Changjoon Yoon and Jeong, {Dong Young} and Moon, {Byung Moo} and Sangsig Kim",

year = "2007",

month = sep,

day = "20",

doi = "10.1143/JJAP.46.6230",

language = "English",

volume = "46",

pages = "6230--6232",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 B",

}

TY - JOUR

T1 - Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing

AU - Keem, Kihyun

AU - Kang, Jeongmin

AU - Yoon, Changjoon

AU - Jeong, Dong Young

AU - Moon, Byung Moo

AU - Kim, Sangsig

PY - 2007/9/20

Y1 - 2007/9/20

N2 - The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.

AB - The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.

KW - Annealing

KW - Field effect transistors

KW - Hydrogen

KW - Nanowire

UR - http://www.scopus.com/inward/record.url?scp=34648827588&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.6230

DO - 10.1143/JJAP.46.6230

M3 - Article

AN - SCOPUS:34648827588

SN - 0021-4922

VL - 46

SP - 6230

EP - 6232

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 B

ER -