Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Dong Young Jeong, Byung Moo Moon, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.

    Original languageEnglish
    Pages (from-to)6230-6232
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number9 B
    DOIs
    Publication statusPublished - 2007 Sept 20

    Keywords

    • Annealing
    • Field effect transistors
    • Hydrogen
    • Nanowire

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

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