Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing

Kihyun Keem; Jeongmin Kang; Changjoon Yoon; Dong Young Jeong; Byung Moo Moon; Sangsig Kim

doi:10.1143/JJAP.46.6230

Enhanced performance of ZnO nanowire field effect transistors by H ₂ annealing

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Dong Young Jeong, Byung Moo Moon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H₂ annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H₂/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm²V^-1 s^-1, and the I_max/I_min ratio from 1.5 to 10⁵.

Original language	English
Pages (from-to)	6230-6232
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	9 B
DOIs	https://doi.org/10.1143/JJAP.46.6230
Publication status	Published - 2007 Sept 20

Keywords

Annealing
Field effect transistors
Hydrogen
Nanowire

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.46.6230

Cite this

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title = "Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing",

abstract = "The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.",

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AU - Keem, Kihyun

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AU - Yoon, Changjoon

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AU - Moon, Byung Moo

AU - Kim, Sangsig

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AB - The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the asfabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302cm2V-1 s-1, and the Imax/Imin ratio from 1.5 to 105.

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