Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)2 Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Sang Youn Chae; Se Jin Park; Sung Gyu Han; Hyejin Jung; Chae Woong Kim; Chaehwan Jeong; Oh Shim Joo; Byoung Koun Min; Yun Jeong Hwang

doi:10.1021/jacs.6b09595

Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)₂ Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Sang Youn Chae
, Se Jin Park
, Sung Gyu Han
, Hyejin Jung
, Chae Woong Kim
, Chaehwan Jeong
, Oh Shim Joo
, Byoung Koun Min^*
, Yun Jeong Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

79 Citations (Scopus)

Abstract

Chalcopyrite Cu(In,Ga)(Se,S)₂ (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO₂ glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS. The CIGS/ZnS/Pt photocathode exhibited highly enhanced PEC activity (∼24 mA·cm^-2 at −0.3 V vs RHE). The performances of our CIGS photocathode on the transparent substrate were also characterized under front/back light illumination, and the incident photon to current conversion efficiency (IPCE) drastically changed depending on the illumination directions showing decreased IPCE especially under UV region with back illumination. The slow minority carrier (electron) transportation is suggested as a limiting factor for the PEC activity of the CIGS photocathode.

Original language	English
Pages (from-to)	15673-15681
Number of pages	9
Journal	Journal of the American Chemical Society
Volume	138
Issue number	48
DOIs	https://doi.org/10.1021/jacs.6b09595
Publication status	Published - 2016 Dec 7

Bibliographical note

Funding Information:
This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program and it was partly supported by the University-Institute Cooperation Program of the National Research Foundation of Korea funded by the Korean Government (MSIP). We thanks M. S. Jee for helpful discussions.

Publisher Copyright:
© 2016 American Chemical Society.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

Access to Document

10.1021/jacs.6b09595

Cite this

@article{ff635e7872b14141b8970337a2f15c06,

title = "Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)2 Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting",

abstract = "Chalcopyrite Cu(In,Ga)(Se,S)2 (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO2 glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS. The CIGS/ZnS/Pt photocathode exhibited highly enhanced PEC activity (∼24 mA·cm-2 at −0.3 V vs RHE). The performances of our CIGS photocathode on the transparent substrate were also characterized under front/back light illumination, and the incident photon to current conversion efficiency (IPCE) drastically changed depending on the illumination directions showing decreased IPCE especially under UV region with back illumination. The slow minority carrier (electron) transportation is suggested as a limiting factor for the PEC activity of the CIGS photocathode.",

author = "Chae, \{Sang Youn\} and Park, \{Se Jin\} and Han, \{Sung Gyu\} and Hyejin Jung and Kim, \{Chae Woong\} and Chaehwan Jeong and Joo, \{Oh Shim\} and Min, \{Byoung Koun\} and Hwang, \{Yun Jeong\}",

note = "Funding Information: This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program and it was partly supported by the University-Institute Cooperation Program of the National Research Foundation of Korea funded by the Korean Government (MSIP). We thanks M. S. Jee for helpful discussions. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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AU - Chae, Sang Youn

AU - Park, Se Jin

AU - Han, Sung Gyu

AU - Jung, Hyejin

AU - Kim, Chae Woong

AU - Jeong, Chaehwan

AU - Joo, Oh Shim

AU - Min, Byoung Koun

AU - Hwang, Yun Jeong

N1 - Funding Information: This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program and it was partly supported by the University-Institute Cooperation Program of the National Research Foundation of Korea funded by the Korean Government (MSIP). We thanks M. S. Jee for helpful discussions. Publisher Copyright: © 2016 American Chemical Society.

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Y1 - 2016/12/7

N2 - Chalcopyrite Cu(In,Ga)(Se,S)2 (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO2 glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS. The CIGS/ZnS/Pt photocathode exhibited highly enhanced PEC activity (∼24 mA·cm-2 at −0.3 V vs RHE). The performances of our CIGS photocathode on the transparent substrate were also characterized under front/back light illumination, and the incident photon to current conversion efficiency (IPCE) drastically changed depending on the illumination directions showing decreased IPCE especially under UV region with back illumination. The slow minority carrier (electron) transportation is suggested as a limiting factor for the PEC activity of the CIGS photocathode.

AB - Chalcopyrite Cu(In,Ga)(Se,S)2 (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO2 glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS. The CIGS/ZnS/Pt photocathode exhibited highly enhanced PEC activity (∼24 mA·cm-2 at −0.3 V vs RHE). The performances of our CIGS photocathode on the transparent substrate were also characterized under front/back light illumination, and the incident photon to current conversion efficiency (IPCE) drastically changed depending on the illumination directions showing decreased IPCE especially under UV region with back illumination. The slow minority carrier (electron) transportation is suggested as a limiting factor for the PEC activity of the CIGS photocathode.

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