Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.
Bibliographical noteFunding Information:
This work was supported by a National Research Foundation (NRF) grant funded by the Korean government (The Ministry of Science, ICT & Future Planning (MSIP) ) (No. 2012R1A2A2A01045102 ). K.-S. Lee acknowledges funding for this work from the Active Polymer Center for Patterned Integration ( ERC R11-2007-050-01002-0 ) of the NRF of Korea. J. Kim acknowledges funding for this work from the Institute for Basic Science (IBS) ( EM 1304 ) of Korea.
- Organic field effect transistor
- Quantum dots
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry