Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots

Tae Hyuk Kim; Yoon Deok Han; Jeongyong Kim; Sumin Jeon; Kwang Sup Lee; Jinsoo Joo

doi:10.1016/j.synthmet.2014.01.013

Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots

Tae Hyuk Kim, Yoon Deok Han, Jeongyong Kim, Sumin Jeon, Kwang Sup Lee, Jinsoo Joo

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λ_ex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I _DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive I_DS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.

Original language	English
Pages (from-to)	8-12
Number of pages	5
Journal	Synthetic Metals
Volume	190
DOIs	https://doi.org/10.1016/j.synthmet.2014.01.013
Publication status	Published - 2014 Apr

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation (NRF) grant funded by the Korean government (The Ministry of Science, ICT & Future Planning (MSIP) ) (No. 2012R1A2A2A01045102 ). K.-S. Lee acknowledges funding for this work from the Active Polymer Center for Patterned Integration ( ERC R11-2007-050-01002-0 ) of the NRF of Korea. J. Kim acknowledges funding for this work from the Institute for Basic Science (IBS) ( EM 1304 ) of Korea.

Keywords

Mobility
Nanosheet
Organic field effect transistor
Photocurrent
Quantum dots
Rubrene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.synthmet.2014.01.013

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title = "Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots",

abstract = "Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.",

keywords = "Mobility, Nanosheet, Organic field effect transistor, Photocurrent, Quantum dots, Rubrene",

author = "Kim, {Tae Hyuk} and Han, {Yoon Deok} and Jeongyong Kim and Sumin Jeon and Lee, {Kwang Sup} and Jinsoo Joo",

note = "Funding Information: This work was supported by a National Research Foundation (NRF) grant funded by the Korean government (The Ministry of Science, ICT & Future Planning (MSIP) ) (No. 2012R1A2A2A01045102 ). K.-S. Lee acknowledges funding for this work from the Active Polymer Center for Patterned Integration ( ERC R11-2007-050-01002-0 ) of the NRF of Korea. J. Kim acknowledges funding for this work from the Institute for Basic Science (IBS) ( EM 1304 ) of Korea.",

year = "2014",

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doi = "10.1016/j.synthmet.2014.01.013",

language = "English",

volume = "190",

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journal = "Synthetic Metals",

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AU - Kim, Tae Hyuk

AU - Han, Yoon Deok

AU - Kim, Jeongyong

AU - Jeon, Sumin

AU - Lee, Kwang Sup

AU - Joo, Jinsoo

N1 - Funding Information: This work was supported by a National Research Foundation (NRF) grant funded by the Korean government (The Ministry of Science, ICT & Future Planning (MSIP) ) (No. 2012R1A2A2A01045102 ). K.-S. Lee acknowledges funding for this work from the Active Polymer Center for Patterned Integration ( ERC R11-2007-050-01002-0 ) of the NRF of Korea. J. Kim acknowledges funding for this work from the Institute for Basic Science (IBS) ( EM 1304 ) of Korea.

PY - 2014/4

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N2 - Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.

AB - Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (I DS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.

KW - Mobility

KW - Nanosheet

KW - Organic field effect transistor

KW - Photocurrent

KW - Quantum dots

KW - Rubrene

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ER -

Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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