Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

Jae Seong Park; Joon Woo Jeon; Chang Hyung Lee; Chang Hoon Choi; Sungho Jin; Tae Yeon Seong

doi:10.1016/j.spmi.2012.05.021

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

Jae Seong Park, Joon Woo Jeon, Chang Hyung Lee, Chang Hoon Choi, Sungho Jin, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO ₂. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 ^-5 Ω cm ² and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

Original language	English
Pages (from-to)	357-363
Number of pages	7
Journal	Superlattices and Microstructures
Volume	52
Issue number	3
DOIs	https://doi.org/10.1016/j.spmi.2012.05.021
Publication status	Published - 2012 Sept

Keywords

A Ru capping layer
Ag ohmic reflector
GaN
Light-emitting diode

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2012.05.021

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title = "Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer",

abstract = "A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.",

keywords = "A Ru capping layer, Ag ohmic reflector, GaN, Light-emitting diode",

author = "Park, {Jae Seong} and Jeon, {Joon Woo} and Lee, {Chang Hyung} and Choi, {Chang Hoon} and Sungho Jin and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the World Class University program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ) and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea .",

year = "2012",

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volume = "52",

pages = "357--363",

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AU - Park, Jae Seong

AU - Jeon, Joon Woo

AU - Lee, Chang Hyung

AU - Choi, Chang Hoon

AU - Jin, Sungho

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the World Class University program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ) and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea .

PY - 2012/9

Y1 - 2012/9

N2 - A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

AB - A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO 2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10 -5 Ω cm 2 and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500°C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500°C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500°C-annealed Ag only contacts. LEDs with the 500°C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500°C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.

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KW - GaN

KW - Light-emitting diode

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Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

Abstract

Keywords

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