Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

M. H. Cho, D. W. Moon, S. A. Park, Y. S. Rho, Y. K. Kim, K. Jeong, C. H. Chang, J. H. Gu, J. H. Lee, S. Y. Choi

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The thermal stability of Gd2O3 films as a function of incorporated ZrO2 was investigated. The structural characteristics of epitaxial Gd2O3 with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO2 in Gd2O3. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.

Original languageEnglish
Pages (from-to)678-680
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2004 Feb 2
Externally publishedYes

Bibliographical note

Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation'. Together they form a unique fingerprint.

Cite this