Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. Kim; B. Luo; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. V. Osinsky; P. E. Norris

doi:10.1063/1.1465119

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

Original language	English
Pages (from-to)	5203-5207
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.1465119
Publication status	Published - 2002 Apr 15
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1465119

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@article{b043d811cbe84c80a3e2b828bee3763a,

title = "Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing",

abstract = "Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and J. Kim and B. Luo and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Osinsky, {A. V.} and Norris, {P. E.}",

year = "2002",

month = apr,

day = "15",

doi = "10.1063/1.1465119",

language = "English",

volume = "91",

pages = "5203--5207",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kim, J.

AU - Luo, B.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

AB - Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias.

UR - http://www.scopus.com/inward/record.url?scp=0037091886&partnerID=8YFLogxK

U2 - 10.1063/1.1465119

DO - 10.1063/1.1465119

M3 - Article

AN - SCOPUS:0037091886

SN - 0021-8979

VL - 91

SP - 5203

EP - 5207

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Abstract

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