Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

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Physics & Astronomy