Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

Suthan Kissinger; Seong Muk Jeong; Seok Hyo Yun; Seung Jae Lee; Dong Wook Kim; In Hwan Lee; Cheul Ro Lee

doi:10.1016/j.sse.2009.11.005

Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

Suthan Kissinger, Seong Muk Jeong, Seok Hyo Yun, Seung Jae Lee, Dong Wook Kim, In Hwan Lee, Cheul Ro Lee

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Blue light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a lens patterned sapphire substrate (LPSS) using a single growth process of metalorganic chemical vapor deposition (MOCVD). In the present study, the PSS with lens shape along the 〈0 0 0 1〉_sapphire direction was fabricated by inductively coupled plasma (ICP) dry etching method. When the blue LED device was operated at a forward-bias current of 20 mA at room temperature, the output power and the luminous intensity were estimated to be 69.3 μW and 159.2 mcd respectively. It was found that the luminous intensity of LPSS-LED was 2.5 times higher than that of the conventional sapphire substrate LED at an injection current of 20 mA. At 20 mA injection current the emission angle of LPSS-LED was 161.46° which is 1.17 times higher than that of CSS-LED. More importantly the LED on LPSS demonstrates a higher output power and an enhancement of the emission efficiency compared to that of LED on conventional sapphire substrate (CSS). In addition, the reduction of full width at half maximum in the HR-XRD curves of GaN on PSS suggested improved crystal quality.

Original language	English
Pages (from-to)	509-515
Number of pages	7
Journal	Solid-State Electronics
Volume	54
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2009.11.005
Publication status	Published - 2010 May
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD; Basic Research Promotion Fund-KRF-2008-314-D00249) and by the Basic Research of the Korea Science and Engineering Foundation (Grant no. R0A-2008-000-20031-0 ) of MOEHRD.

Keywords

Dry etching
Lens patterned sapphire substrate
Light-emitting diode
MOCVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2009.11.005

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@article{01c2f19dbf944c3cb56025e445ec1b59,

title = "Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)",

abstract = "Blue light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a lens patterned sapphire substrate (LPSS) using a single growth process of metalorganic chemical vapor deposition (MOCVD). In the present study, the PSS with lens shape along the 〈0 0 0 1〉sapphire direction was fabricated by inductively coupled plasma (ICP) dry etching method. When the blue LED device was operated at a forward-bias current of 20 mA at room temperature, the output power and the luminous intensity were estimated to be 69.3 μW and 159.2 mcd respectively. It was found that the luminous intensity of LPSS-LED was 2.5 times higher than that of the conventional sapphire substrate LED at an injection current of 20 mA. At 20 mA injection current the emission angle of LPSS-LED was 161.46° which is 1.17 times higher than that of CSS-LED. More importantly the LED on LPSS demonstrates a higher output power and an enhancement of the emission efficiency compared to that of LED on conventional sapphire substrate (CSS). In addition, the reduction of full width at half maximum in the HR-XRD curves of GaN on PSS suggested improved crystal quality.",

keywords = "Dry etching, Lens patterned sapphire substrate, Light-emitting diode, MOCVD",

author = "Suthan Kissinger and Jeong, {Seong Muk} and Yun, {Seok Hyo} and Lee, {Seung Jae} and Kim, {Dong Wook} and Lee, {In Hwan} and Lee, {Cheul Ro}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD; Basic Research Promotion Fund-KRF-2008-314-D00249) and by the Basic Research of the Korea Science and Engineering Foundation (Grant no. R0A-2008-000-20031-0 ) of MOEHRD.",

year = "2010",

month = may,

doi = "10.1016/j.sse.2009.11.005",

language = "English",

volume = "54",

pages = "509--515",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "5",

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TY - JOUR

T1 - Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

AU - Kissinger, Suthan

AU - Jeong, Seong Muk

AU - Yun, Seok Hyo

AU - Lee, Seung Jae

AU - Kim, Dong Wook

AU - Lee, In Hwan

AU - Lee, Cheul Ro

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD; Basic Research Promotion Fund-KRF-2008-314-D00249) and by the Basic Research of the Korea Science and Engineering Foundation (Grant no. R0A-2008-000-20031-0 ) of MOEHRD.

PY - 2010/5

Y1 - 2010/5

N2 - Blue light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a lens patterned sapphire substrate (LPSS) using a single growth process of metalorganic chemical vapor deposition (MOCVD). In the present study, the PSS with lens shape along the 〈0 0 0 1〉sapphire direction was fabricated by inductively coupled plasma (ICP) dry etching method. When the blue LED device was operated at a forward-bias current of 20 mA at room temperature, the output power and the luminous intensity were estimated to be 69.3 μW and 159.2 mcd respectively. It was found that the luminous intensity of LPSS-LED was 2.5 times higher than that of the conventional sapphire substrate LED at an injection current of 20 mA. At 20 mA injection current the emission angle of LPSS-LED was 161.46° which is 1.17 times higher than that of CSS-LED. More importantly the LED on LPSS demonstrates a higher output power and an enhancement of the emission efficiency compared to that of LED on conventional sapphire substrate (CSS). In addition, the reduction of full width at half maximum in the HR-XRD curves of GaN on PSS suggested improved crystal quality.

AB - Blue light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a lens patterned sapphire substrate (LPSS) using a single growth process of metalorganic chemical vapor deposition (MOCVD). In the present study, the PSS with lens shape along the 〈0 0 0 1〉sapphire direction was fabricated by inductively coupled plasma (ICP) dry etching method. When the blue LED device was operated at a forward-bias current of 20 mA at room temperature, the output power and the luminous intensity were estimated to be 69.3 μW and 159.2 mcd respectively. It was found that the luminous intensity of LPSS-LED was 2.5 times higher than that of the conventional sapphire substrate LED at an injection current of 20 mA. At 20 mA injection current the emission angle of LPSS-LED was 161.46° which is 1.17 times higher than that of CSS-LED. More importantly the LED on LPSS demonstrates a higher output power and an enhancement of the emission efficiency compared to that of LED on conventional sapphire substrate (CSS). In addition, the reduction of full width at half maximum in the HR-XRD curves of GaN on PSS suggested improved crystal quality.

KW - Dry etching

KW - Lens patterned sapphire substrate

KW - Light-emitting diode

KW - MOCVD

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DO - 10.1016/j.sse.2009.11.005

M3 - Article

AN - SCOPUS:77949422808

SN - 0038-1101

VL - 54

SP - 509

EP - 515

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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