Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode

Hoon Kim; Sang Won Seo; Joo Won Lee; Jong Won Park; Yun Hi Lee; Jin Jang; Byeong Kwon Ju

doi:10.1116/1.1537715

Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode

Hoon Kim, Sang Won Seo, Joo Won Lee, Jong Won Park, Yun Hi Lee, Jin Jang, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The crystallographic orientations of sputtered Cr films as a function of substrate temperature T_s were characterized by SEM, XRD, and estimation of etched features. It was found that the tapering angle θ_t of thin Cr films after reactive ion etching depends on the deposition conditions. In the case of nontapered-gated FEAs, emission properties were enhanced.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1537715
Publication status	Published - 2003 Jan

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1537715

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Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode. / Kim, Hoon; Seo, Sang Won; Lee, Joo Won et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.2003, p. 186-192.

Research output: Contribution to journal › Article › peer-review

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title = "Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode",

abstract = "The crystallographic orientations of sputtered Cr films as a function of substrate temperature Ts were characterized by SEM, XRD, and estimation of etched features. It was found that the tapering angle θt of thin Cr films after reactive ion etching depends on the deposition conditions. In the case of nontapered-gated FEAs, emission properties were enhanced.",

author = "Hoon Kim and Seo, {Sang Won} and Lee, {Joo Won} and Park, {Jong Won} and Lee, {Yun Hi} and Jin Jang and Ju, {Byeong Kwon}",

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AU - Kim, Hoon

AU - Seo, Sang Won

AU - Lee, Joo Won

AU - Park, Jong Won

AU - Lee, Yun Hi

AU - Jang, Jin

AU - Ju, Byeong Kwon

PY - 2003/1

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N2 - The crystallographic orientations of sputtered Cr films as a function of substrate temperature Ts were characterized by SEM, XRD, and estimation of etched features. It was found that the tapering angle θt of thin Cr films after reactive ion etching depends on the deposition conditions. In the case of nontapered-gated FEAs, emission properties were enhanced.

AB - The crystallographic orientations of sputtered Cr films as a function of substrate temperature Ts were characterized by SEM, XRD, and estimation of etched features. It was found that the tapering angle θt of thin Cr films after reactive ion etching depends on the deposition conditions. In the case of nontapered-gated FEAs, emission properties were enhanced.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode

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