Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer

Soyoung Choo; Jinyoung Choi; Hak Jong Choi; Daihong Huh; Soomin Son; Yang Doo Kim; Heon Lee

doi:10.1016/j.ceramint.2017.05.209

Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO₂ high-aspect-ratio pattern as scattering layer

Soyoung Choo, Jinyoung Choi, Hak Jong Choi, Daihong Huh, Soomin Son, Yang Doo Kim, Heon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We developed the direct patterning process of the ZrO₂ high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO₂ HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO₂ nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO₂ patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1 µm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20 mA.

Original language	English
Pages (from-to)	S609-S612
Journal	Ceramics International
Volume	43
DOIs	https://doi.org/10.1016/j.ceramint.2017.05.209
Publication status	Published - 2017 Aug

Bibliographical note

Funding Information:
S. Y. Choo and J. Choi have equally contributed to this work. This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIP) (2016R1A2B3015400) and this research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3C1A3063046).

Publisher Copyright:
© 2017

Keywords

Films
Functional applications
Optical properties
ZrO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2017.05.209

Cite this

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title = "Enhancement of light extraction efficiency for GaN-based light emitting diodes using ZrO2 high-aspect-ratio pattern as scattering layer",

abstract = "We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1 µm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20 mA.",

keywords = "Films, Functional applications, Optical properties, ZrO",

author = "Soyoung Choo and Jinyoung Choi and Choi, {Hak Jong} and Daihong Huh and Soomin Son and Kim, {Yang Doo} and Heon Lee",

note = "Funding Information: S. Y. Choo and J. Choi have equally contributed to this work. This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIP) (2016R1A2B3015400) and this research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3C1A3063046). Publisher Copyright: {\textcopyright} 2017",

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language = "English",

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AU - Choo, Soyoung

AU - Choi, Jinyoung

AU - Choi, Hak Jong

AU - Huh, Daihong

AU - Son, Soomin

AU - Kim, Yang Doo

AU - Lee, Heon

N1 - Funding Information: S. Y. Choo and J. Choi have equally contributed to this work. This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIP) (2016R1A2B3015400) and this research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3C1A3063046). Publisher Copyright: © 2017

PY - 2017/8

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N2 - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1 µm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20 mA.

AB - We developed the direct patterning process of the ZrO2 high-aspect-ratio (HAR) pattern for light-extraction efficiency of GaN-based blue light-emitting diodes (LEDs). ZrO2 HAR pattern, which has relatively high refractive index and acts as scattering layer, was formed on GaN-based blue LEDs using ultraviolet-nanoimprint lithography (UV-NIL) with mixture of ZrO2 nanoparticle and monomer. The photons generated from the multi-quantum well layer can escape the ITO (Indium Tin Oxide) layer more easily due to gradual refractive index and optical path that increased via waveguide mode. The ZrO2 patterned LED with high pattern density showed the high brightness in same input current. The patterned LED with pitch of 1 µm showed the 25.7% higher light output power than a un-patterned LED at a driving current of 20 mA.

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