Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

B. J. Kim, H. Jung, J. Shin, M. A. Mastro, C. R. Eddy, J. K. Hite, S. H. Kim, J. Bang, J. Kim

    Research output: Contribution to journalLetterpeer-review

    29 Citations (Scopus)

    Abstract

    Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer, consisting of benzocyclobutene (BCB) resins; subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%.

    Original languageEnglish
    Pages (from-to)2742-2744
    Number of pages3
    JournalThin Solid Films
    Volume517
    Issue number8
    DOIs
    Publication statusPublished - 2009 Feb 27

    Bibliographical note

    Funding Information:
    The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea. The research at NRL was supported by ONR.

    Keywords

    • Light emitting diode
    • Light extraction efficiency
    • Nanosphere arrays

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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