Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

  • B. J. Kim
  • , H. Jung
  • , J. Shin
  • , M. A. Mastro
  • , C. R. Eddy
  • , J. K. Hite
  • , S. H. Kim
  • , J. Bang*
  • , J. Kim
  • *Corresponding author for this work

    Research output: Contribution to journalLetterpeer-review

    30 Citations (Scopus)

    Abstract

    Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer, consisting of benzocyclobutene (BCB) resins; subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%.

    Original languageEnglish
    Pages (from-to)2742-2744
    Number of pages3
    JournalThin Solid Films
    Volume517
    Issue number8
    DOIs
    Publication statusPublished - 2009 Feb 27

    Bibliographical note

    Funding Information:
    The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea. The research at NRL was supported by ONR.

    Keywords

    • Light emitting diode
    • Light extraction efficiency
    • Nanosphere arrays

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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