Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures

Kyung Min Yoon; Ki Yeon Yang; Kyeong Jae Byeon; Heon Lee

doi:10.1016/j.sse.2010.01.004

Enhancement of light extraction in GaN based LED structures using TiO₂ nano-structures

Kyung Min Yoon, Ki Yeon Yang, Kyeong Jae Byeon, Heon Lee

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

TiO₂ nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO₂ nano-patterns formed on the ITO layer because the TiO₂ nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO₂ nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.

Original language	English
Pages (from-to)	484-487
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2010.01.004
Publication status	Published - 2010 Apr

Bibliographical note

Funding Information:
This work was partly supported by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts] and basic research program from Korea Science and Nano R&D program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology [2008-04501].

Keywords

Light emitting diode (LED)
Nano-pattern
Photoluminescence
Photon extraction efficiency
Sol-imprint
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2010.01.004

Cite this

@article{4a581b67b5974ee0b226a6cc69067ae1,

title = "Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures",

abstract = "TiO2 nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO2 nano-patterns formed on the ITO layer because the TiO2 nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO2 nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.",

keywords = "Light emitting diode (LED), Nano-pattern, Photoluminescence, Photon extraction efficiency, Sol-imprint, TiO",

author = "Yoon, {Kyung Min} and Yang, {Ki Yeon} and Byeon, {Kyeong Jae} and Heon Lee",

note = "Funding Information: This work was partly supported by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts] and basic research program from Korea Science and Nano R&D program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology [2008-04501].",

year = "2010",

month = apr,

doi = "10.1016/j.sse.2010.01.004",

language = "English",

volume = "54",

pages = "484--487",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "4",

}

TY - JOUR

T1 - Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures

AU - Yoon, Kyung Min

AU - Yang, Ki Yeon

AU - Byeon, Kyeong Jae

AU - Lee, Heon

N1 - Funding Information: This work was partly supported by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts] and basic research program from Korea Science and Nano R&D program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology [2008-04501].

PY - 2010/4

Y1 - 2010/4

N2 - TiO2 nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO2 nano-patterns formed on the ITO layer because the TiO2 nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO2 nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.

AB - TiO2 nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO2 nano-patterns formed on the ITO layer because the TiO2 nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO2 nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.

KW - Light emitting diode (LED)

KW - Nano-pattern

KW - Photoluminescence

KW - Photon extraction efficiency

KW - Sol-imprint

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=77349111720&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.01.004

DO - 10.1016/j.sse.2010.01.004

M3 - Article

AN - SCOPUS:77349111720

SN - 0038-1101

VL - 54

SP - 484

EP - 487

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -