TY - JOUR
T1 - Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate
AU - Park, Hyoungwon
AU - Byeon, Kyeong Jae
AU - Jang, Jong Jin
AU - Nam, Okhyun
AU - Lee, Heon
N1 - Funding Information:
This study is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work was supported partially by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts].
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/11
Y1 - 2011/11
N2 - In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.
AB - In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.
KW - Electroluminescence (EL)
KW - GaN-based light-emitting diodes (LEDs)
KW - Nanoimprint lithography (NIL)
KW - Nanometer-scaled patterned sapphire substrate (NPSS)
KW - Photoluminescence (PL)
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U2 - 10.1016/j.mee.2011.07.014
DO - 10.1016/j.mee.2011.07.014
M3 - Article
AN - SCOPUS:80053344027
SN - 0167-9317
VL - 88
SP - 3207
EP - 3213
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 11
ER -