Abstract
In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 3207-3213 |
| Number of pages | 7 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Nov |
Bibliographical note
Funding Information:This study is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work was supported partially by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts].
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
Keywords
- Electroluminescence (EL)
- GaN-based light-emitting diodes (LEDs)
- Nanoimprint lithography (NIL)
- Nanometer-scaled patterned sapphire substrate (NPSS)
- Photoluminescence (PL)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering