Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Hyoungwon Park; Kyeong Jae Byeon; Jong Jin Jang; Okhyun Nam; Heon Lee

doi:10.1016/j.mee.2011.07.014

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Hyoungwon Park
, Kyeong Jae Byeon
, Jong Jin Jang
, Okhyun Nam
, Heon Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.

Original language	English
Pages (from-to)	3207-3213
Number of pages	7
Journal	Microelectronic Engineering
Volume	88
Issue number	11
DOIs	https://doi.org/10.1016/j.mee.2011.07.014
Publication status	Published - 2011 Nov

Bibliographical note

Funding Information:
This study is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work was supported partially by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts].

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

Electroluminescence (EL)
GaN-based light-emitting diodes (LEDs)
Nanoimprint lithography (NIL)
Nanometer-scaled patterned sapphire substrate (NPSS)
Photoluminescence (PL)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.07.014

Cite this

@article{cda504a3f2ab4a49bc4151115331b809,

title = "Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate",

abstract = "In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.",

keywords = "Electroluminescence (EL), GaN-based light-emitting diodes (LEDs), Nanoimprint lithography (NIL), Nanometer-scaled patterned sapphire substrate (NPSS), Photoluminescence (PL)",

author = "Hyoungwon Park and Byeon, \{Kyeong Jae\} and Jang, \{Jong Jin\} and Okhyun Nam and Heon Lee",

note = "Funding Information: This study is the outcome of a Manpower Development Program for Energy \& Resources supported by the Ministry of Knowledge and Economy (MKE). This work was supported partially by the IT R\&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts]. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = nov,

doi = "10.1016/j.mee.2011.07.014",

language = "English",

volume = "88",

pages = "3207--3213",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

AU - Park, Hyoungwon

AU - Byeon, Kyeong Jae

AU - Jang, Jong Jin

AU - Nam, Okhyun

AU - Lee, Heon

N1 - Funding Information: This study is the outcome of a Manpower Development Program for Energy & Resources supported by the Ministry of Knowledge and Economy (MKE). This work was supported partially by the IT R&D program of MKE/IITA [2009-F-025-01, Development of Core Technology for High Efficiency Light Emitting Diode based on New Concepts]. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/11

Y1 - 2011/11

N2 - In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.

AB - In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs.

KW - Electroluminescence (EL)

KW - GaN-based light-emitting diodes (LEDs)

KW - Nanoimprint lithography (NIL)

KW - Nanometer-scaled patterned sapphire substrate (NPSS)

KW - Photoluminescence (PL)

UR - https://www.scopus.com/pages/publications/80053344027

U2 - 10.1016/j.mee.2011.07.014

DO - 10.1016/j.mee.2011.07.014

M3 - Article

AN - SCOPUS:80053344027

SN - 0167-9317

VL - 88

SP - 3207

EP - 3213

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 11

ER -

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this