Presently, the 3-terminal artificial synapse device has been in focus for neuromorphic computing systems owing to its excellent weight controllability. Here, an artificial synapse device based on the 3-terminal solid-state electrolyte-gated transistor is proposed to achieve outstanding synaptic characteristics with a human-like mechanism at low power. Novel synaptic characteristics are accomplished by precisely tuning the threshold voltage using the proton-electron coupling effect, which is caused by proton migration inside the electrolyte. However, these synaptic characteristics are degraded because traps at the interface of channel/electrolyte disturb the proton–electron coupling effect. To minimize degradation, the oxygen plasma treatment is performed to reduce interface traps. As a result, symmetric weight updates and outstanding synaptic characteristics are achieved. Furthermore, high repeatability and long-term plasticity are observed at low operating power, which is essential for artificial synapses. Therefore, this study shows the progress of artificial synapses and proposes a promising method, a low-power neuromorphic system, to achieve high accuracy.
Bibliographical noteFunding Information:
This research was supported in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016M3A7B4910426), and in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2020R1A2C2004029, and in part by the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329).
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- artificial synapse
- electrolyte-gated field-effect transistor
- oxygen plasma treatment
- proton–electron coupling
- solid-state electrolyte
ASJC Scopus subject areas
- Engineering (miscellaneous)
- Materials Science(all)