Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography

Byung Jae Kim; Joona Bang; Sung Hyun Kim; Jihyun Kim

doi:10.1149/1.3299327

Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO₂ nanosphere lithography

Byung Jae Kim, Joona Bang, Sung Hyun Kim, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO₂ nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

Original language	English
Pages (from-to)	H449-H451
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	4
DOIs	https://doi.org/10.1149/1.3299327
Publication status	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3299327

Cite this

@article{49336a25265b46d3848e98bef99a549c,

title = "Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography",

abstract = "A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.",

author = "Kim, {Byung Jae} and Joona Bang and Kim, {Sung Hyun} and Jihyun Kim",

year = "2010",

doi = "10.1149/1.3299327",

language = "English",

volume = "157",

pages = "H449--H451",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography

AU - Kim, Byung Jae

AU - Bang, Joona

AU - Kim, Sung Hyun

AU - Kim, Jihyun

PY - 2010

Y1 - 2010

N2 - A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

AB - A benzocyclobutene (BCB)-based graded-refractive-index (GRIN) layer was deposited on gallium nitride (GaN)-based blue light-emitting diodes (LEDs) to enhance the light-extraction efficiency. The GRIN layer, which was composed of both a BCB thin film and a porous structure, was fabricated by nanospheres lithography using SiO2 nanospheres. The refractive index of the porous BCB layer was intentionally controlled to reduce the total internal reflection of GaN-based LEDs. The refractive indexes of the BCB layer and porous BCB layer were 1.58 and 1.2, respectively. Consequently, the photoluminescence intensity was enhanced 1.6 times after employing the GRIN BCB layer on the GaN layer, and the electroluminescence intensity at a 10 mA injection current was increased by 22% after employing the GRIN BCB layer on an indium tin oxide layer.

UR - http://www.scopus.com/inward/record.url?scp=77949711920&partnerID=8YFLogxK

U2 - 10.1149/1.3299327

DO - 10.1149/1.3299327

M3 - Article

AN - SCOPUS:77949711920

SN - 0013-4651

VL - 157

SP - H449-H451

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 4

ER -