Abstract
Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250-1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.
Original language | English |
---|---|
Pages (from-to) | 793-796 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 51 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2007 May |
Bibliographical note
Funding Information:This work was supported by the basic research program of the Korea Science and Engineering Foundation (Grant no. R01-2006-000-10904-0).
Keywords
- GaN
- ITO
- LEDs
- Surface patterning
- Wet-etching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry