Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

Kwangeun Kim, Youngin Jeon, Kyoungah Cho, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

    Original languageEnglish
    Pages (from-to)2764-2773
    Number of pages10
    JournalACS Applied Materials and Interfaces
    Volume8
    Issue number4
    DOIs
    Publication statusPublished - 2016 Feb 3

    Bibliographical note

    Publisher Copyright:
    © 2016 American Chemical Society.

    Keywords

    • ZnO
    • finite difference time domain
    • finite element method
    • nanowire
    • piezoelectronics
    • piezophototronics
    • trap-assisted electroluminescence

    ASJC Scopus subject areas

    • General Materials Science

    Fingerprint

    Dive into the research topics of 'Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect'. Together they form a unique fingerprint.

    Cite this