Abstract
The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron-hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
Original language | English |
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Pages (from-to) | 2764-2773 |
Number of pages | 10 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2016 Feb 3 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
Keywords
- ZnO
- finite difference time domain
- finite element method
- nanowire
- piezoelectronics
- piezophototronics
- trap-assisted electroluminescence
ASJC Scopus subject areas
- General Materials Science