Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts

Hyunik Park, Jihyun Kim

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Reducing power consumption and leakage current in complementary metal-oxide semiconductors (CMOSs) has gained importance for further increasing the transistor density. An effective strategy to achieve this is to use ambipolar carrier transport that can exploit both holes and electrons in a single transistor. We report the enhancement of ambipolar behavior in black phosphorus (BP) field-effect transistors (FET) by forming a low-resistance Ni2P alloy contact via low-vacuum annealing at 250 °C, where the transformation of BP into Ni2P alloy selectively occurred at the source/drain electrodes with the BP channel remaining pristine. The N-channel current on/off ratio and field-effect electron carrier mobility of BP FETs were improved by 98% and 1290%, respectively. Our results suggest that high-performance ambipolar BP FETs with low-resistance ohmic contacts can be achieved via low-temperature vacuum annealing for next-generation CMOS applications.

    Original languageEnglish
    Pages (from-to)22439-22444
    Number of pages6
    JournalPhysical Chemistry Chemical Physics
    Volume20
    Issue number35
    DOIs
    Publication statusPublished - 2018

    Bibliographical note

    Publisher Copyright:
    © the Owner Societies.

    ASJC Scopus subject areas

    • General Physics and Astronomy
    • Physical and Theoretical Chemistry

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