Epitaxial growth of Cr2O3 thin film on Al 2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing

Sang Yong Jeong; Jin Bok Lee; Hyunseok Na; Tae Yeon Seong

doi:10.1016/j.tsf.2010.01.046

Epitaxial growth of Cr₂O₃ thin film on Al ₂O₃ (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing

Sang Yong Jeong, Jin Bok Lee, Hyunseok Na, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We prepared epitaxially grown Cr₂O₃ thin films on Al₂O₃ (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O₂). X-ray diffraction (XRD) results show that oxygen-rich CrO₃ phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O₂) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO₃ phase to transform into epitaxial Cr₂O₃ phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

Original language	English
Pages (from-to)	4813-4816
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2010.01.046
Publication status	Published - 2010 Jun 30

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R33-2008-000-10025-0 ).

Keywords

Chromium Oxide
Epitaxial growth
Radio frequency magnetron sputtering
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2010.01.046

Cite this

@article{6a5ac94bbc7a40c5b53dfe5779d070c9,

title = "Epitaxial growth of Cr2O3 thin film on Al 2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing",

abstract = "We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.",

keywords = "Chromium Oxide, Epitaxial growth, Radio frequency magnetron sputtering, X-ray diffraction",

author = "Jeong, {Sang Yong} and Lee, {Jin Bok} and Hyunseok Na and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the National Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R33-2008-000-10025-0 ).",

year = "2010",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2010.01.046",

language = "English",

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journal = "Thin Solid Films",

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T1 - Epitaxial growth of Cr2O3 thin film on Al 2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing

AU - Jeong, Sang Yong

AU - Lee, Jin Bok

AU - Na, Hyunseok

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the National Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R33-2008-000-10025-0 ).

PY - 2010/6/30

Y1 - 2010/6/30

N2 - We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

AB - We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.

KW - Chromium Oxide

KW - Epitaxial growth

KW - Radio frequency magnetron sputtering

KW - X-ray diffraction

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