Abstract
We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm.
Original language | English |
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Pages (from-to) | 4813-4816 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2010 Jun 30 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R33-2008-000-10025-0 ).
Keywords
- Chromium Oxide
- Epitaxial growth
- Radio frequency magnetron sputtering
- X-ray diffraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry