Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Chul Ho Lee; Theanne Schiros; Elton J.G. Santos; Bumjung Kim; Kevin G. Yager; Seok Ju Kang; Sunwoo Lee; Jaeeun Yu; Kenji Watanabe; Takashi Taniguchi; James Hone; Efthimios Kaxiras; Colin Nuckolls; Philip Kim

doi:10.1002/adma.201304973

Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Chul Ho Lee
, Theanne Schiros
, Elton J.G. Santos
, Bumjung Kim
, Kevin G. Yager
, Seok Ju Kang
, Sunwoo Lee
, Jaeeun Yu
, Kenji Watanabe
, Takashi Taniguchi
, James Hone
, Efthimios Kaxiras
, Colin Nuckolls^*
, Philip Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

Original language	English
Pages (from-to)	2812-2817
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	18
DOIs	https://doi.org/10.1002/adma.201304973
Publication status	Published - 2014 May 14
Externally published	Yes

Keywords

hexagonal boron nitride (h-BN)
organic semiconductors organic field-effect transistors
rubrene
van der Waals heterostructures

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201304973

Cite this

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title = "Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics",

abstract = "Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.",

keywords = "hexagonal boron nitride (h-BN), organic semiconductors organic field-effect transistors, rubrene, van der Waals heterostructures",

author = "Lee, \{Chul Ho\} and Theanne Schiros and Santos, \{Elton J.G.\} and Bumjung Kim and Yager, \{Kevin G.\} and Kang, \{Seok Ju\} and Sunwoo Lee and Jaeeun Yu and Kenji Watanabe and Takashi Taniguchi and James Hone and Efthimios Kaxiras and Colin Nuckolls and Philip Kim",

year = "2014",

month = may,

day = "14",

doi = "10.1002/adma.201304973",

language = "English",

volume = "26",

pages = "2812--2817",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "18",

}

TY - JOUR

T1 - Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

AU - Lee, Chul Ho

AU - Schiros, Theanne

AU - Santos, Elton J.G.

AU - Kim, Bumjung

AU - Yager, Kevin G.

AU - Kang, Seok Ju

AU - Lee, Sunwoo

AU - Yu, Jaeeun

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Hone, James

AU - Kaxiras, Efthimios

AU - Nuckolls, Colin

AU - Kim, Philip

PY - 2014/5/14

Y1 - 2014/5/14

N2 - Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

AB - Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

KW - hexagonal boron nitride (h-BN)

KW - organic semiconductors organic field-effect transistors

KW - rubrene

KW - van der Waals heterostructures

UR - https://www.scopus.com/pages/publications/84900001911

U2 - 10.1002/adma.201304973

DO - 10.1002/adma.201304973

M3 - Article

AN - SCOPUS:84900001911

SN - 0935-9648

VL - 26

SP - 2812

EP - 2817

JO - Advanced Materials

JF - Advanced Materials

IS - 18

ER -

Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Abstract

Keywords

ASJC Scopus subject areas

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