An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+ -ion-implantation. We employed high-dose N+ -ion-implantation as an ELO mask instead of usual dielectric material such as Six Ny or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 μm width, resulting in a complete coalescence after approximately 2.5 μm of growth in the  direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2010|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry