Epitaxial lateral overgrowth of GaN on sapphire substrate using high-dose N+ -ion-implantation

Bumjoon Kim, Samseok Jang, Sangil Kim, Youngseok Kim, Jaesang Lee, Dongjin Byun

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+ -ion-implantation. We employed high-dose N+ -ion-implantation as an ELO mask instead of usual dielectric material such as Six Ny or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 μm width, resulting in a complete coalescence after approximately 2.5 μm of growth in the [0001] direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.

Original languageEnglish
Pages (from-to)H1132-H1134
JournalJournal of the Electrochemical Society
Issue number12
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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