Abstract
An epitaxial laterally overgrown (ELOG) GaN layer was deposited on a (0001) sapphire substrate. Here we introduce a maskless and single-step epitaxial lateral overgrowth (ELO) process using high-dose N+ -ion-implantation. We employed high-dose N+ -ion-implantation as an ELO mask instead of usual dielectric material such as Six Ny or SiO2. The GaN layer was laterally grown over the ion implanted array formed in a stripe pattern of 4 μm width, resulting in a complete coalescence after approximately 2.5 μm of growth in the [0001] direction. Transmission electron microscopy and photoluminescence analysis confirmed the reduced dislocation density of the ELO grown GaN layer.
| Original language | English |
|---|---|
| Pages (from-to) | H1132-H1134 |
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
- Electrochemistry
- Renewable Energy, Sustainability and the Environment
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