Epitaxial lateral overgrowth of GaN on Si (111) substrates using high-dose, N⁺ ion implantation

Engineering & Materials Science

• Cathodoluminescence 100%
• Ion implantation 71%
• Chemical vapor deposition 61%
• Coalescence 61%
• Microscopic examination 56%
• Crystalline materials 55%
• X ray diffraction 51%
• Masks 49%
• Ions 48%
• Scanning 40%
• Substrates 37%
• Metals 33%

Physics & Astronomy

• ion implantation 48%
• dosage 34%
• cathodoluminescence 19%
• coalescing 16%
• flat surfaces 15%
• implantation 15%
• masks 14%
• vapor deposition 13%
• wafers 13%
• microscopy 12%
• scanning 11%
• high resolution 10%
• diffraction 9%
• metals 8%
• ions 8%
• x rays 7%

Chemical Compounds

• Ion Implantation 64%
• Polycrystalline Solid 47%
• Implanted Ion 37%
• Cathodoluminescence 35%
• Coalescence 28%
• Surface 8%