Abstract
In this research, the number of quantum well (QW) were optimized to improve the device performance of nonpolar a-plane (11-20) GaN light-emitting diodes (LEDs). Based on a theoretical consideration, we applied four periods of 3.5-nm-thick In0.23Ga0.77N quantum wells and 6-nm-thick GaN quantum barriers in order to reduce the carrier overflow and thereby to increase the radiative recombination rates. As a result, we found that the radiative recombination rate was increased by 29% at 20 mA while the forward voltage and the light output-power were improved by 7.4% and 12.3%, respectively, compared with a single QW nonpolar a-plane GaN LED.
| Original language | English |
|---|---|
| Pages (from-to) | 1215-1218 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769).
Keywords
- Epitaxial structure
- Gallium-nitride (GaN)
- Lightemitting diodes (LEDs)
- Multiple quantum-wells (MQW)
- Nonpolar
ASJC Scopus subject areas
- General Physics and Astronomy