@inproceedings{b943e2b3bcc64af19af206c4d342cc21,
title = "Epitaxial ZnO/4H-SiC heterojunction diodes",
abstract = "High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM). Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics, and a leakage current less than 10-9 A at -10 V, with a forward current of ∼10-5 A at +10 V. The responsivity is measured for different UV wavwlengths. As the intensity of UV wavelength is decreased from 365 nm to 254 nm, the photocurrent increased 1.7x10-5 A to 3x10-5 A.",
author = "Lee, {Jae Sang} and Kim, {Ji Hong} and Moon, {Byung Moo} and Wook Bahng and Kim, {Sang Cheol} and Kim, {Nam Kyun} and Koo, {Sang Mo}",
year = "2010",
doi = "10.1109/INEC.2010.5424596",
language = "English",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "706--707",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",
}