TY - GEN
T1 - Epitaxial ZnO/4H-SiC heterojunction diodes
AU - Lee, Jae Sang
AU - Kim, Ji Hong
AU - Moon, Byung Moo
AU - Bahng, Wook
AU - Kim, Sang Cheol
AU - Kim, Nam Kyun
AU - Koo, Sang Mo
PY - 2010
Y1 - 2010
N2 - High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM). Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics, and a leakage current less than 10-9 A at -10 V, with a forward current of ∼10-5 A at +10 V. The responsivity is measured for different UV wavwlengths. As the intensity of UV wavelength is decreased from 365 nm to 254 nm, the photocurrent increased 1.7x10-5 A to 3x10-5 A.
AB - High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM). Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics, and a leakage current less than 10-9 A at -10 V, with a forward current of ∼10-5 A at +10 V. The responsivity is measured for different UV wavwlengths. As the intensity of UV wavelength is decreased from 365 nm to 254 nm, the photocurrent increased 1.7x10-5 A to 3x10-5 A.
UR - http://www.scopus.com/inward/record.url?scp=77951664542&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951664542&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424596
DO - 10.1109/INEC.2010.5424596
M3 - Conference contribution
AN - SCOPUS:77951664542
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 706
EP - 707
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -