Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Young Jun Yu; Gwan Hyoung Lee; Ji Il Choi; Yoon Su Shim; Chul Ho Lee; Seok Ju Kang; Sunwoo Lee; Kwang Taeg Rim; George W. Flynn; James Hone; Yong Hoon Kim; Philip Kim; Colin Nuckolls; Seokhoon Ahn

doi:10.1002/adma.201603925

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Young Jun Yu, Gwan Hyoung Lee, Ji Il Choi, Yoon Su Shim, Chul Ho Lee, Seok Ju Kang, Sunwoo Lee, Kwang Taeg Rim, George W. Flynn, James Hone, Yong Hoon Kim, Philip Kim, Colin Nuckolls, Seokhoon Ahn

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Original language	English
Article number	1603925
Journal	Advanced Materials
Volume	29
Issue number	5
DOIs	https://doi.org/10.1002/adma.201603925
Publication status	Published - 2017 Feb

Keywords

graphene
mobility
passivation
self-assembly
van der Waals interaction

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201603925

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@article{d3fc90a25b9e406c8dd66acd9090ede3,

title = "Epitaxially Self-Assembled Alkane Layers for Graphene Electronics",

keywords = "graphene, mobility, passivation, self-assembly, van der Waals interaction",

author = "Yu, {Young Jun} and Lee, {Gwan Hyoung} and Choi, {Ji Il} and Shim, {Yoon Su} and Lee, {Chul Ho} and Kang, {Seok Ju} and Sunwoo Lee and Rim, {Kwang Taeg} and Flynn, {George W.} and James Hone and Kim, {Yong Hoon} and Philip Kim and Colin Nuckolls and Seokhoon Ahn",

note = "Funding Information: Y.-J.Y., G.-H.L., and J.I.C. contributed equally to this work. The authors thank J. Kim, S. Jeon, and S. Ryu for characterization and discussion of Raman spectroscopy in graphene. This work was supported through the Korea Institute of Science and Technology Institutional Program, Office of Basic Energy Sciences under Award No. DE-SC0001085 in part by NSF MIRT DMR-1122594, and the FAME Center, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. P.K., S.A., and Y.H.K. thank Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP) (2012M3A7B4049966, 2016M3A7B4024133, and 2016M3A7B4900135). P.K. acknowledges support from AFOSR(FA9550-14-1-0268). Y.-H.K. was supported by the Global Frontier Hybrid Interface Materials Program (No. 2013M3A6B1078881) and the Pioneer Program (2016M3C1A3906149) of the NRF funded by the MSIP. Y.J.Y. thanks the Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of two-dimensional materials and devices for the platform of new-functional smart devices) and the Creative Research Program (16ZB1810) of the ETRI, Korea. S.A. thanks the Graphene Materials/Components Development Project (10044366) through the Ministry of Trade, Industry, and Energy (MOTIE), Korea. G.H.L. was supported by Basic Science Research Program (NRF-2014R1A1A1004632) through NRF funded by the MSIP and in part by the Yonsei University Future-leading Research Initiative of 2014. S.J.K. was supported by the year of 2015 Research Fund of the UNIST(1.140117.01) and C.H.L. was supported by Basic Science Research Program (NRF-2014R1A1A2055112) through the NRF funded by the Korean Government Ministry of Education and KU-KIST Graduate School of Converging Science and Technology Program.",

year = "2017",

month = feb,

doi = "10.1002/adma.201603925",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

AU - Yu, Young Jun

AU - Lee, Gwan Hyoung

AU - Choi, Ji Il

AU - Shim, Yoon Su

AU - Lee, Chul Ho

AU - Kang, Seok Ju

AU - Lee, Sunwoo

AU - Rim, Kwang Taeg

AU - Flynn, George W.

AU - Hone, James

AU - Kim, Yong Hoon

AU - Kim, Philip

AU - Nuckolls, Colin

AU - Ahn, Seokhoon

N1 - Funding Information: Y.-J.Y., G.-H.L., and J.I.C. contributed equally to this work. The authors thank J. Kim, S. Jeon, and S. Ryu for characterization and discussion of Raman spectroscopy in graphene. This work was supported through the Korea Institute of Science and Technology Institutional Program, Office of Basic Energy Sciences under Award No. DE-SC0001085 in part by NSF MIRT DMR-1122594, and the FAME Center, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. P.K., S.A., and Y.H.K. thank Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP) (2012M3A7B4049966, 2016M3A7B4024133, and 2016M3A7B4900135). P.K. acknowledges support from AFOSR(FA9550-14-1-0268). Y.-H.K. was supported by the Global Frontier Hybrid Interface Materials Program (No. 2013M3A6B1078881) and the Pioneer Program (2016M3C1A3906149) of the NRF funded by the MSIP. Y.J.Y. thanks the Institute for Information and Communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (B0117-16-1003, Fundamental technologies of two-dimensional materials and devices for the platform of new-functional smart devices) and the Creative Research Program (16ZB1810) of the ETRI, Korea. S.A. thanks the Graphene Materials/Components Development Project (10044366) through the Ministry of Trade, Industry, and Energy (MOTIE), Korea. G.H.L. was supported by Basic Science Research Program (NRF-2014R1A1A1004632) through NRF funded by the MSIP and in part by the Yonsei University Future-leading Research Initiative of 2014. S.J.K. was supported by the year of 2015 Research Fund of the UNIST(1.140117.01) and C.H.L. was supported by Basic Science Research Program (NRF-2014R1A1A2055112) through the NRF funded by the Korean Government Ministry of Education and KU-KIST Graduate School of Converging Science and Technology Program.

PY - 2017/2

Y1 - 2017/2

KW - graphene

KW - mobility

KW - passivation

KW - self-assembly

KW - van der Waals interaction

UR - http://www.scopus.com/inward/record.url?scp=85006127991&partnerID=8YFLogxK

U2 - 10.1002/adma.201603925

DO - 10.1002/adma.201603925

M3 - Article

C2 - 27905154

AN - SCOPUS:85006127991

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 5

M1 - 1603925

ER -

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Keywords

ASJC Scopus subject areas

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