Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

Man Young Sung; Ey Goo Kang; Dae Jong Kim; Sang Sig Kim

doi:10.1143/JJAP.51.079204

Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

Man Young Sung, Ey Goo Kang, Dae Jong Kim, Sang Sig Kim

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	079204
Journal	Japanese journal of applied physics
Volume	51
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.079204
Publication status	Published - 2012 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.51.079204

Cite this

Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119)). / Sung, Man Young; Kang, Ey Goo; Kim, Dae Jong et al.
In: Japanese journal of applied physics, Vol. 51, No. 7 PART 1, 079204, 07.2012.

Research output: Contribution to journal › Comment/debate › peer-review

@article{beab9f8038e046a0b1e13daad4423002,

title = "Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))",

author = "Sung, {Man Young} and Kang, {Ey Goo} and Kim, {Dae Jong} and Kim, {Sang Sig}",

year = "2012",

month = jul,

doi = "10.1143/JJAP.51.079204",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 PART 1",

}

TY - JOUR

T1 - Erratum

T2 - A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

AU - Sung, Man Young

AU - Kang, Ey Goo

AU - Kim, Dae Jong

AU - Kim, Sang Sig

PY - 2012/7

Y1 - 2012/7

UR - http://www.scopus.com/inward/record.url?scp=84863799111&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.079204

DO - 10.1143/JJAP.51.079204

M3 - Comment/debate

AN - SCOPUS:84863799111

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 PART 1

M1 - 079204

ER -

Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this