Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119))

Man Young Sung, Ey Goo Kang, Dae Jong Kim, Sang Sig Kim

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Article number079204
JournalJapanese journal of applied physics
Issue number7 PART 1
Publication statusPublished - 2012 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this