Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

Joon Woo Jeon, Tae Yeon Seong, Gon Namkoong

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Pages (from-to)2304
Number of pages1
JournalJournal of Electronic Materials
Issue number8
Publication statusPublished - 2012 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this