Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

Joon Woo Jeon; Tae Yeon Seong; Gon Namkoong

doi:10.1007/s11664-012-2171-x

Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

Joon Woo Jeon, Tae Yeon Seong, Gon Namkoong

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	2304
Number of pages	1
Journal	Journal of Electronic Materials
Volume	41
Issue number	8
DOIs	https://doi.org/10.1007/s11664-012-2171-x
Publication status	Published - 2012 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-012-2171-x

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Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0). / Jeon, Joon Woo; Seong, Tae Yeon; Namkoong, Gon.
In: Journal of Electronic Materials, Vol. 41, No. 8, 08.2012, p. 2304.

Research output: Contribution to journal › Comment/debate › peer-review

@article{c951479a37164870aef77234372f7b96,

title = "Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)",

author = "Jeon, {Joon Woo} and Seong, {Tae Yeon} and Gon Namkoong",

year = "2012",

month = aug,

doi = "10.1007/s11664-012-2171-x",

language = "English",

volume = "41",

pages = "2304",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - Erratum

T2 - Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

AU - Jeon, Joon Woo

AU - Seong, Tae Yeon

AU - Namkoong, Gon

PY - 2012/8

Y1 - 2012/8

UR - http://www.scopus.com/inward/record.url?scp=84885608694&partnerID=8YFLogxK

U2 - 10.1007/s11664-012-2171-x

DO - 10.1007/s11664-012-2171-x

M3 - Comment/debate

AN - SCOPUS:84885608694

SN - 0361-5235

VL - 41

SP - 2304

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

ASJC Scopus subject areas

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