Erratum: Electrical characteristics of Ti/Al Ohmic contacts to molecular beam epitaxy-grown N-polar n-type GaN for vertical-structure light-emitting Diodes (Journal of Electronic Materials DOI: 10.1007/s11664-012-2136-0)

Joon Woo Jeon, Tae Yeon Seong, Gon Namkoong

Research output: Contribution to journal › Comment/debate › peer-review

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