Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Dong Seok Leem; Tae Wook Kim; Takhee Lee; Ja Soon Jang; Young Woo Ok; Tae Yeon Seong

doi:10.1063/1.2460605

Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Dong Seok Leem, Tae Wook Kim, Takhee Lee, Ja Soon Jang, Young Woo Ok, Tae Yeon Seong

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	079901
Journal	Applied Physics Letters
Volume	90
Issue number	7
DOIs	https://doi.org/10.1063/1.2460605
Publication status	Published - 2007

Bibliographical note

Funding Information:
The acknowledgment should have included: “This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10904-0).”

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2460605

Cite this

@article{54e043dffc0d42448a6846e1d41b9214,

title = "Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))",

author = "Leem, {Dong Seok} and Kim, {Tae Wook} and Takhee Lee and Jang, {Ja Soon} and Ok, {Young Woo} and Seong, {Tae Yeon}",

note = "Funding Information: The acknowledgment should have included: “This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10904-0).”",

year = "2007",

doi = "10.1063/1.2460605",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Erratum

T2 - Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

AU - Leem, Dong Seok

AU - Kim, Tae Wook

AU - Lee, Takhee

AU - Jang, Ja Soon

AU - Ok, Young Woo

AU - Seong, Tae Yeon

N1 - Funding Information: The acknowledgment should have included: “This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10904-0).”

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=33847145837&partnerID=8YFLogxK

U2 - 10.1063/1.2460605

DO - 10.1063/1.2460605

M3 - Comment/debate

AN - SCOPUS:33847145837

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 079901

ER -

Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Bibliographical note

ASJC Scopus subject areas

Access to Document

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