Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9)

Seung Min Lee; Tae Yeon Seong; Wook Seong Lee; Young Joon Baik; Jong Keuk Park

doi:10.1007/s12540-013-3036-4

Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9)

Seung Min Lee, Tae Yeon Seong, Wook Seong Lee, Young Joon Baik, Jong Keuk Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	902
Number of pages	1
Journal	Metals and Materials International
Volume	19
Issue number	4
DOIs	https://doi.org/10.1007/s12540-013-3036-4
Publication status	Published - 2013 Jul

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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10.1007/s12540-013-3036-4

Cite this

Lee, S. M., Seong, T. Y., Lee, W. S., Baik, Y. J., & Park, J. K. (2013). Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9). Metals and Materials International, 19(4), 902. https://doi.org/10.1007/s12540-013-3036-4

Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9). / Lee, Seung Min; Seong, Tae Yeon; Lee, Wook Seong et al.
In: Metals and Materials International, Vol. 19, No. 4, 07.2013, p. 902.

Research output: Contribution to journal › Comment/debate › peer-review

Lee, SM, Seong, TY, Lee, WS, Baik, YJ & Park, JK 2013, 'Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9)', Metals and Materials International, vol. 19, no. 4, pp. 902. https://doi.org/10.1007/s12540-013-3036-4

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Erratum: Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux (Metals and Materials International (2013) 19:3 (591-595) DOI: 10.1007/s12540-013-3031-9)

ASJC Scopus subject areas

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