Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo; Lu Liu; Fan Ren; Stephen J. Pearton; Brent P. Gila; Hong Yeol Kim; Jihyun Kim; Oleg Laboutin; Yu Cao; Jerry W. Johnson; Ivan I. Kravchenko

doi:10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	043401
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4737150
Publication status	Published - 2012 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4737150

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Lo, C. F., Liu, L., Ren, F., Pearton, S. J., Gila, B. P., Kim, H. Y., Kim, J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2012). Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(4), Article 043401. https://doi.org/10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). / Lo, Chien Fong; Liu, Lu; Ren, Fan et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 4, 043401, 07.2012.

Research output: Contribution to journal › Comment/debate › peer-review

Lo, CF, Liu, L, Ren, F, Pearton, SJ, Gila, BP, Kim, HY, Kim, J, Laboutin, O, Cao, Y, Johnson, JW & Kravchenko, II 2012, 'Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 30, no. 4, 043401. https://doi.org/10.1116/1.4737150

Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY et al. Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2012 Jul;30(4):043401. doi: 10.1116/1.4737150

Lo, Chien Fong ; Liu, Lu ; Ren, Fan et al. / Erratum : Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2012 ; Vol. 30, No. 4.

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title = "Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))",

author = "Lo, {Chien Fong} and Lu Liu and Fan Ren and Pearton, {Stephen J.} and Gila, {Brent P.} and Kim, {Hong Yeol} and Jihyun Kim and Oleg Laboutin and Yu Cao and Johnson, {Jerry W.} and Kravchenko, {Ivan I.}",

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AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

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AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

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Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

ASJC Scopus subject areas

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