Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Article number043401
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number4
Publication statusPublished - 2012 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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