Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

    Research output: Contribution to journal › Comment/debate › peer-review

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