Erratum: Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101)

Myung Ju Kim; Dong Su Jeon; Ju Hyun Park; Tae Geun Kim

doi:10.1063/1.4941106

Erratum: Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101)

Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	049902
Journal	Applied Physics Letters
Volume	108
Issue number	4
DOIs	https://doi.org/10.1063/1.4941106
Publication status	Published - 2016 Jan 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4941106

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Erratum: Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101). / Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun et al.
In: Applied Physics Letters, Vol. 108, No. 4, 049902, 25.01.2016.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: Publisher's note: "bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices" (Applied Physics Letters (2015) 106:203101)

ASJC Scopus subject areas

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