Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

K. Heo; B. H. Hong; E. H. Lee; S. Y. Lee; S. Kim; S. W. Hwang

doi:10.1109/LED.2013.2285072

Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, S. Kim, S. W. Hwang

School of Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

1 Citation (Scopus)

Original language	English
Article number	6634212
Pages (from-to)	1442
Number of pages	1
Journal	IEEE Electron Device Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/LED.2013.2285072
Publication status	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2285072

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Heo, K., Hong, B. H., Lee, E. H., Lee, S. Y., Kim, S., & Hwang, S. W. (2013). Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) ). IEEE Electron Device Letters, 34(11), 1442. Article 6634212. https://doi.org/10.1109/LED.2013.2285072

Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) ). / Heo, K.; Hong, B. H.; Lee, E. H. et al.
In: IEEE Electron Device Letters, Vol. 34, No. 11, 6634212, 2013, p. 1442.

Research output: Contribution to journal › Comment/debate › peer-review

Heo, K, Hong, BH, Lee, EH, Lee, SY, Kim, S & Hwang, SW 2013, 'Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )', IEEE Electron Device Letters, vol. 34, no. 11, 6634212, pp. 1442. https://doi.org/10.1109/LED.2013.2285072

@article{a0af664a5d054386bbcb5003ab6fc552,

title = "Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )",

author = "K. Heo and Hong, \{B. H.\} and Lee, \{E. H.\} and Lee, \{S. Y.\} and S. Kim and Hwang, \{S. W.\}",

year = "2013",

doi = "10.1109/LED.2013.2285072",

language = "English",

volume = "34",

pages = "1442",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Erratum

T2 - Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

AU - Heo, K.

AU - Hong, B. H.

AU - Lee, E. H.

AU - Lee, S. Y.

AU - Kim, S.

AU - Hwang, S. W.

PY - 2013

Y1 - 2013

UR - https://www.scopus.com/pages/publications/84887220656

U2 - 10.1109/LED.2013.2285072

DO - 10.1109/LED.2013.2285072

M3 - Comment/debate

AN - SCOPUS:84887220656

SN - 0741-3106

VL - 34

SP - 1442

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6634212

ER -

Erratum: Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors (IEEE Electron Device Letters (2013) 34: 2 (247-249) )

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